PART |
Description |
Maker |
2SD1816S-TL-E 2SD1816S-H 2SD1816S-E 2SD1816S-TL-H |
Bipolar Transistor Bipolar Transistor (-)100V, (-)4A, Low VCE(sat), (PNP)NPN Single TP/TP-FA
|
ON Semiconductor
|
MJD18002D2-D |
Bipolar NPN Transistor High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-In Efficient Antisaturation Network
|
ON Semiconductor
|
CJD127 CJD127PNP CJD122 CJD122NPN CJD122-NPN |
SMD Bipolar Power Transistor NPN Darlington COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTOR 互补性的芯片功率达林顿晶体管 From old datasheet system SMD Bipolar Power Transistor PNP Darlington
|
Central Semiconductor, Corp. Central Semiconductor Corp. CENTRAL[Central Semiconductor Corp]
|
HBDM60V600W-7 |
COMPLEX TRANSISTOR ARRAY FOR BIPOLAR TRANSISTOR HALF H-BRIDGE MOTOR/ACTUATOR DRIVER
|
Diodes Incorporated
|
JANSG2N2369A JANS2N2369AUA |
BJT( BiPolar Junction Transistor) NPN Transistor
|
Microsemi
|
JANSM2N2904 JANSM2N2905AL 2N2904E3 JANSR2N2904 JAN |
BJT( BiPolar Junction Transistor) PNP Transistor
|
Microsemi
|
2SC5658-Q |
Discrete Devices-Transistor-NPN Bipolar Transistor
|
Taiwan Semiconductor
|
2N3765U4 2N3764U4 JANS2N3764U4 JANSD2N3764U4 JAN2N |
PNP Transistor BJT( BiPolar Junction Transistor)
|
Microsemi
|
IRG4BC29K IRG4BC30K IRG4BC30 |
600V UltraFast 8-25 kHz Discrete IGBT in a TO-220AB package INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.21V, @Vge=15V, Ic=16A)
|
IRF[International Rectifier]
|
CZT3055 CZT3055NPN CZT2955PNP CZT2955 CZT305 |
SMD Bipolar Power Transistor NPN General Purpose Amplifier/Switch SMD Bipolar Power Transistor PNP General Purpose Amplifier/Switch 2.0W SURFACE MOUNT COMPLEMENTARY SILICON POWER TRANSISTOR
|
CENTRAL[Central Semiconductor Corp]
|
STD13003 |
Switching Bipolar Power Transistor |Power Transistor |400V 1.5A 1.2W HFE8~40 开关功率晶体管|功率晶体管| 400V 1.5A的功率为1.2W HFE840 NPN Silicon Power Transistor
|
AUK, Corp. AUK[AUK corp]
|